Main Title |
Microwave plasma processing apparatus / |
Author |
Fukuda, Takuya.
|
Other Authors |
|
Publisher |
[United States Patent Office], |
Year Published |
1995 |
OCLC Number |
1400075426 |
Subjects |
Microwave devices--Patents ;
Patents--United States
|
Holdings |
Library |
Call Number |
Additional Info |
Location |
Last Modified |
Checkout Status |
ELBR REF |
TK7876.F85 1995 |
|
AWBERC Library/Cincinnati,OH |
10/05/2023 |
|
Collation |
16 pages : illustrations ; 28 cm. |
Notes |
Caption title. [Patent no.] 5,449,411 ; [date of patent]: Sep. 12, 1995. At head of title: United States patent [19], Fukuda et al. Photocopy. |
Contents Notes |
A microwave plasma processing apparatus is provided with a vacuum chamber, a substrate holder for mounting a substrate to be processed, a reactive gas feed port, a cleaning gas feed port, a plasma generation device for generating a processing plasma from the reactive gas and a cleaning plasma from the cleaning gas, and a high-frequency electric field application device for applying an electric field having a frequency that allows ions in the cleaning plasma to follow changes in the electric field. The high-frequency electric field application device is activated to apply the electric field to the cleaning plasma so as to remove substances that have been deposited on the surfaces of the vacuum chamber and substrate holder due to the processing of the substrate by the processing plasma, thereby cleaning up the vacuum chamber and substrate holder. |
Place Published |
Washington, D.C. |
Access Notes |
Also available via the World Wide Web |
Corporate Au Added Ent |
United States. Patent Office. |
PUB Date Free Form |
1995 |
BIB Level |
m |
Medium |
unmediated |
Content |
text |
Carrier |
volume |
Cataloging Source |
OCLC/T |
OCLC Time Stamp |
20230928213017 |
Language |
eng |
Origin |
OCLC |
Type |
CAT |
OCLC Rec Leader |
02274nam 2200397Ia 45010 |