Main Title |
Methods for the improved microwave deposition of thin films / |
Author |
Ovshinsky, Stanford R.
|
Other Authors |
|
Publisher |
[United States Patent Office], |
Year Published |
1994 |
OCLC Number |
1400075394 |
Subjects |
Microwave devices--Patents ;
Patents--United States
|
Holdings |
Library |
Call Number |
Additional Info |
Location |
Last Modified |
Checkout Status |
ELBR REF |
TK7876.O97 1994 |
|
AWBERC Library/Cincinnati,OH |
10/05/2023 |
|
Collation |
14 pages : illustrations ; 28 cm. |
Notes |
Caption title. [Patent no.] 5,324,553 ; [date of patent]: Jun. 28, 1994. At head of title: United States patent [19], Ovshinsky et al. Photocopy. |
Contents Notes |
An improved chemical vapor deposition method for the high-rate low-temperature deposition of high-quality thin film material. The method includes the steps of providing an evacuated chamber having a plasma deposition region defined therein; placing a substrate inside the chamber; supplying plasma deposition precursor gases to the deposition region in the evacuated chamber; directing microwave energy from a source thereof to the deposition region, the microwave energy interacting with the deposition precursor gases to form a plasma of electrons, ions and activated electrically neutral species, the plasma including one or more depositing species; increasing the surface mobility of the depositing species in the plasma by coupling additional non-microwave electronic energy and magnetic energy into the plasma, without intentionally adding thermal energy to the substrate or precursor gas; and depositing a thin film of material onto the substrate. |
Place Published |
Washington, D.C. |
Access Notes |
Also available via the World Wide Web |
Corporate Au Added Ent |
United States. Patent Office. |
PUB Date Free Form |
1994 |
BIB Level |
m |
Medium |
unmediated |
Content |
text |
Carrier |
volume |
Cataloging Source |
OCLC/T |
OCLC Time Stamp |
20230928213017 |
Language |
eng |
Origin |
OCLC |
Type |
CAT |
OCLC Rec Leader |
02355nam 2200385Ia 45010 |