Record Display for the EPA National Library Catalog


OLS Field Name OLS Field Data
Main Title Environmental technology initiative : chemical-free cleaning of semiconductors by the radiation process /
Author Legge, Ronald N., ; Thompson, D. L. ; Convey, D. J. ; Peterson, J. D.
Other Authors
Author Title of a Work
Thompson, Dan L.,
Convey, Diana J.,
Peterson, Joel D.,
CORP Author Motorola, Inc., Tempe, AZ.;National Risk Management Research Lab., Cincinnati, OH. Sustainable Technology Div.
Publisher U.S. Environmental Protection Agency, Office of Research and Development, National Risk Management Research Laboratory, National Technical Information Service (NTIS)
Year Published 1998
Report Number EPA/600/R-98/153
Stock Number PB99-126518
OCLC Number 946645538
Additional Subjects Semiconductors ; Cleaning ; Dry methods ; Waters ; Silicon ; Removal ; Particles ; Flat panel displays ; Lasers ; Slurries ; Mechanical polishing ; Chemical polishing ; Technology innovation ; Pollution prevention ; Waste minimization
Library Call Number Additional Info Location Last
ELBD RPS EPA 600-R-98-153 repository 2 copies AWBERC Library/Cincinnati,OH 04/28/2016
ELBD  EPA 600-R-98-153 AWBERC Library/Cincinnati,OH 05/03/2016
NTIS  PB99-126518 Most EPA libraries have a fiche copy filed under the call number shown. Check with individual libraries about paper copy. 07/22/2019
Collation viii, 24 pages : figures, tables ; 28 cm
The Radiance Process (R) is a patented dry process for removing contaminants from surfaces. It uses light, usually from a pulsed laser and a gas inert to the surface, to entrain released contaminants. The focus of this effort is to assess the applicability of the Radiance Process (R) to the semiconductor industry and its pollution prevention potential. This report discusses the results of experiments conducted to investigate the effectiveness of the Radiance Process (R) in removing chemical mechanical polishing (CMP) slurries from wafers, cleaning flat panel display glass, and removing particles from bare silicon wafers. The results show that post-CMP cleaning using the Radiance Process (R) can restore bare silicon waters to near virgin conditions. For flat panel display material, the Radiance Process (R) was used to clean vendor-supplied float glass substrates used in fabrication. This resulted in reducing total particle counts in excess of 5000 to below 100. These results were equal to, or, in some cases, better than current wet cleaning processes. Contamination not removed by wet processing was further reduced by using the Radiance Process (R). Particle removal from bare silicon wafers was tested in two specific conditions with no statistically significant repeatable removal rates.
Cover title. "EPA/600/R-98/153." "September 1998." "EPA reference: DW97937360-01-0." "Project officer, Paul M. Randall." "PB99-126518." Includes bibliographical references (page 19). Photocopy.