TY  - THES
A1  - Machima, P 
T1  - SiO2 and Si3N4 etch mechanisms in NF3/C2H4 plasma.
Y1  - 2005//
N1  - R831459
ER  - 


TY  - JOUR
A1  - Lee, D 
A1  - Ting, Y 
A1  - Oksuz, L 
A1  - Hershkowitz, N 
T1  - Measurement of plasma potential fluctuations by emissive probes in CF4 radio-frequency plasma.
Y1  - 2006/11/
N1  - R831459
JF  - PLASMA SOURCES SCIENCE TECHNOLOGY
VL  - 15
IS  - 4
SP  - 873–878
ER  - 


TY  - JOUR
A1  - Machima, P 
A1  - Hershkowitz, N 
T1  - SiO2 and Si3N4 etch mechanisms in NF3/hydrocarbon plasma.
Y1  - 2006/02/21
N1  - R831459
JF  - JOURNAL OF PHYSICS D
VL  - 39
IS  - 4
SP  - 673
EP  - 684
ER  - 


TY  - PAT
A1  - Hershkowitz, N 
A1  - Denes, F S
A1  - Manolache, S O
T1  - Method and apparatus for producing colloidal nanoparticles in a dense medium plasma
Y1  - 2006/10/31
N1  - R831459
IS  - Patent no. 7,128,816
ER  - 


TY  - CONF
A1  - Machima, P 
A1  - Hershkowitz, N 
T1  - Silicon oxide and silicon nitride etching in inductive NF3/C2H4 plasma.
Y1  - 2004/10/3-8
N1  - R831459
ER  - 


TY  - CONF
A1  - Machima, P 
A1  - Hershkowitz, N 
T1  - Plasma etching of SiO2 and Si3N4 with NF3/C2H4-a new approach to reduce global warming gas production.
Y1  - 2004/09/26-29
N1  - R831459
ER  - 


TY  - CONF
A1  - Machima, P 
A1  - Hershkowitz, N 
T1  - SiO2 and Si3N4 etch mechanisms in NF3/C2H4 plasma.
Y1  - 2005/10/16-20
N1  - R831459
ER  -