TY  - JOUR
A1  - Jacquot, B C
A1  - Lee,   C
A1  - Shen, Y N
A1  - Kan, E C
T1  - Time-resolved charge transport sensing by chemoreceptive neuron MOS transistors (CvMOS) with microfluidic channels
Y1  - 2007//
N1  - R830902
JF  - IEEE SENSORS JOURNAL
VL  - 7
IS  - 9-10
SP  - 1429
EP  - 1434
ER  - 


TY  - JOUR
A1  - Kim, M 
A1  - Shen, N 
A1  - Lee,   C
A1  - Kan,   
T1  - Fast and sensitive electret polymer characterization by extended floating gate MOSFET.
Y1  - 2005//
N1  - R830902
JF  - IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION
J1  - IEEE T DIELECT EL IN
VL  - 12
IS  - 5
SP  - 1082
EP  - 1087
ER  - 


TY  - JOUR
A1  - Liu, Z 
A1  - Kim, M 
A1  - Shen, N 
A1  - Kan, E C
T1  - Actuation by electrostatic repulsion by nonvolatile charge injection.
Y1  - 2005//
N1  - R830902
JF  - SENSORS AND ACTUATORS A: PHYSICAL
J1  - NONE
VL  - 119
IS  - 1
SP  - 236
EP  - 244
ER  - 


TY  - JOUR
A1  - Shen,   
A1  - Liu, Z 
A1  - Lee, C 
A1  - Minch, B A
A1  - Kan,   
T1  - Charge-based chemical sensors: a neuromorphic approach with chemoreceptive neuron MOS (C/spl nu/MOS) transistors.
Y1  - 2003//
N1  - R830902
JF  - IEEE TRANSACTIONS ON ELECTRON DEVICES
J1  - IEEE T ELECTRON DEV
VL  - 50
IS  - 10
SP  - 2171
EP  - 2178
ER  - 


TY  - JOUR
A1  - Shen,   
A1  - Liu, Z 
A1  - Jacquot, B C
A1  - Minch, B A
A1  - Kan, E C
T1  - Integration of chemical sensing and electrowetting actuation on chemoreceptive neuron MOS (C vMOS) transistors.
Y1  - 2004//
N1  - R830902
JF  - SENSORS AND ACTUATORS B: CHEMICAL
J1  - NONE
VL  - 102
IS  - 1
SP  - 35
EP  - 43
ER  - 


TY  - JOUR
A1  - Shen, Y N
A1  - Liu, Z 
A1  - Peng, S 
A1  - Jacquot, B C
A1  - Minch, B A
A1  - Kan, E C
T1  - Response analyses on polymeric surface coatings for charge-based sensing in chemoreceptive neuron MOS (CνMOS) transistors.
Y1  - 2005//
N1  - R830902
JF  - IEEE SENSORS JOURNAL
ER  - 


TY  - PAT
A1  - Kan, E C
A1  - Liu, Z 
A1  - Narayanan, V 
T1  - Embedded metal nanocrystals
Y1  - 2002/12/19
N1  - R830902
IS  - Patent appl. no. 20020192949
ER  - 


TY  - PAT
A1  - Kan, E C
A1  - Liu, Z 
A1  - Lee,   C
T1  - Multibit metal nanocrystal memories and fabrication
Y1  - 2004/07/08
N1  - R830902
IS  - Patent appl. no. 20040130941
ER  - 


TY  - PAT
A1  - Kan, E 
A1  - Zhang, Y 
A1  - Ganguly, U 
T1  - Nanotube-and nanocrystal-based non-volatile memory
Y1  - 2007/01/18
N1  - R830902
IS  - Patent appl. no. 20070014151
ER  - 


TY  - PAT
A1  - Kan, E 
A1  - Zhang, Y 
A1  - Ganguly, U 
T1  - Nanotube- and nanocrystal-based non-volatile memory
Y1  - 2007/03/22
N1  - R830902
IS  - Patent appl. no. 20070064478
ER  - 


TY  - CONF
A1  - Jacquot, B C
A1  - Lee, C 
A1  - Shen, Y N
A1  - Kan, E C
T1  - Time-resolved ion and molecule transport sensing with microfluidic integration by chemoreceptive neuron MOS transistors (CνMOS).
Y1  - 2005/10/
N1  - R830902
ER  - 


TY  - CONF
A1  - Jacquot, B C
A1  - Lee, C 
A1  - Shen, Y N
A1  - Kan,   
T1  - Time-resolved ion and molecule transport sensing with microfluidic integration by chemoreceptive neuron MOS transistors (CνMOS).
Y1  - 2005//
N1  - R830902
ER  - 


TY  - CONF
A1  - Jacquot, B C
A1  - Mu, N 
A1  - Kan, E C
T1  - Electrolyte pulse current measurements by CνMOS with microsecond and thermal voltage resolution.
N1  - R830902
ER  - 


TY  - CONF
A1  - Jacquot, B C
A1  - Mu, N 
A1  - Kan, E C
T1  - Thermal and pressure sensing by chemoreceptive MOS transistors (CνMOS) with PVDF coating.
N1  - R830902
ER  - 


TY  - CONF
A1  - Kan, E C
A1  - Liu, Z 
A1  - Wang, P 
A1  - Kim, M 
A1  - Shen, Y N
T1  - Design and technology of submillimeter autonomous microsystems: a real power viewpoint for functional module integration.
Y1  - 2003//
N1  - R830902
ER  - 


TY  - CONF
A1  - Kim, M 
A1  - Shen, Y N
A1  - Lee, C 
A1  - Kan, E C
T1  - Improvement of polymer electret characteristics by inclusion of Au colloids.
Y1  - 2004/11/
N1  - R830902
ER  - 


TY  - CONF
A1  - Kim, M 
A1  - Lee, C 
A1  - Kan, E C
T1  - A new technique for contact mechanics and friction in microstructures: controllable electrostatic repulsive forces from capacitive coupling to electret.
Y1  - 2005/09/
N1  - R830902
ER  - 


TY  - CONF
A1  - Kim, M 
A1  - Kan, E C
T1  - MEMS test structures for electrostatic de-stiction under charge injection.
N1  - R830902
ER  - 


TY  - CONF
A1  - Shen, Y N
A1  - Liu, Z 
A1  - Minch, B A
A1  - Kan, E C
T1  - Charge-based chemoreceptive neuron MOS transistors (CnMOS): a novel floating-gate device for molecular and chemical sensing.
Y1  - 2003/06/
N1  - R830902
ER  - 


TY  - CONF
A1  - Shen, Y N
A1  - Liu, Z 
A1  - Minch, B A
A1  - Kan, E C
T1  - The chemoreceptive neuron MOS transistors (CnMOS): a novel floating-gate device for molecular and chemical sensing.
Y1  - 2003/06/
N1  - R830902
ER  - 


TY  - CONF
A1  - Shen, Y N
A1  - Liu, Z 
A1  - Jacquot, B C
A1  - Kan, E C
T1  - Integration of silicon vascular, olfactory, and gustatory units: Charge-based actuation and sensing by controlling solid-liquid surface electrochemistry.
Y1  - 2003/10/
N1  - R830902
ER  - 


TY  - CONF
A1  - Shen, Y N
A1  - Jacquot, B C
A1  - Kan, E C
T1  - Chemoreceptive neuron MOS (CnMOS) transistors for environmental monitoring: detection in fluid and gas ambient.
Y1  - 2004/03/
N1  - R830902
ER  - 


TY  - CONF
A1  - Shen,   
A1  - Liu, Z 
A1  - Peng, S Y
A1  - Minch,   
A1  - Kan, E C
T1  - Polymer surface electrochemistry for charge-based sensing in chemoreceptive neuron MOS (CνMOS) transistors.
Y1  - 2003/10/
N1  - R830902
ER  -