Grantee Research Project Results
2D MoS2-Based Field Effect Transistor Sensors for Airborne PFAS Detection
EPA Grant Number: SU840683Title: 2D MoS2-Based Field Effect Transistor Sensors for Airborne PFAS Detection
Investigators: Zhao, Mark , Zhang, Wen
Institution: New Jersey Institute of Technology
EPA Project Officer: Brooks, Donald
Phase: I
Project Period: January 1, 2024 through December 31, 2025
Project Amount: $75,000
RFA: 20th Annual P3 Awards: A National Student Design Competition Focusing on People, Prosperity and the Planet Request for Applications (RFA) (2023) RFA Text | Recipients Lists
Research Category: P3 Awards , Air , Air Quality and Air Toxics , Air Toxics
Description:
PFAS air emission is attracting increasing concerns due to the toxicity of PFAS and as a significant contamination pathway to ground and surface water. This project embodies the P3 approaches and aims to develop sustainable electronic sensors to detect airborne PFAS pollutant, protect our communities, and improve human health conditions. Efficient monitoring PFAS in air would reap billions of dollars in human health and ecological security. The proposed FET sensors aims to achieve highly sensitive and selective airborne PFAS detection with high durability. The simple device design contributes to the cost-effective fabrication and potential on-chip integration for portable and onsite uses. Besides the research efforts to develop novel detection technologies to support onsite air quality monitoring, synergistic educational activities such as new teaching materials and workshops will be operated to involve undergraduates and graduates in different STEM disciplines to learn about the EPA P3 principles and concepts and importance of novel sensing technologies for safeguarding human health from air pollutants.
Objective:
Per-/poly-fluoroalkyl substances (PFAS) are currently the most important contaminants of emerging concern due the prevalent presence in the environment and suspected toxicological effects. Although water is the main route that human is exposed to PFAS, toxic PFAS compounds are contaminating the air inside homes, classrooms, stores, and manufacturing facilities at alarming levels. Robust, accurate methods for detecting and measuring PFAS in air are essential for understanding which PFAS are in the air and how much are present. These methods are also essential for evaluating the effectiveness of different technologies for removing PFAS from the air and for implementing future regulations. The conventional analytical methods require complex sample preparation, skilled professionals and high operational cost. In contrast, electronic sensors based on the field-effect transistor (FET) geometry have demonstrate extremely high sensitivity and selectivity towards air pollutant detection. Moreover, FET sensors have low fabrication cost and high potential for on-chip integration. This project aims to develop 2D MoS2-based FET sensors for airborne PFAS detection. Based on our recently developed innovative functionalization method, the project will (1) fabricate novel 2D MoS2-based FET sensors using hexagonal boron nitride (hBN) films to stabilize MoS2 and facilitate the functionalization of MoS2 with PFAS probe molecules (e.g., 1-pyrenebutyric hydrazide); (2) systematically examine the sensing performance, device stability and reusability when probing PFAS in synthetic and field air samples. This invention could improve the monitoring efficiency of PFAS exposure in the air to safeguard human health at a low cost. It will also provide valuable information to inform air quality decisions making at the state, tribal and local level.
Expected Results:
The research outputs include peer-reviewed journal articles, conference presentations, novel PFAS sensor design guide, patent application, project reports, and educational workshops on air quality monitoring. The potential project outcome is to foster the commercialization of FET PFAS air sensors and new workforce development and to protect the public from exposure to PFAS in water. The measure of success includes the numbers of peer-reviewed journal publications, granted patents and public workshops and new established partnerships.
Supplemental Keywords:
2D semiconductor, MoS2, field-effector transistors, sensors, hBN films, functionalization, PFAS air detection, sensitivity, selectivityThe perspectives, information and conclusions conveyed in research project abstracts, progress reports, final reports, journal abstracts and journal publications convey the viewpoints of the principal investigator and may not represent the views and policies of ORD and EPA. Conclusions drawn by the principal investigators have not been reviewed by the Agency.