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RADIANCE PROCESS EVALUATION FOR PARTICLE REMOVAL
Citation:
Legge, R. N., D. J. Convey, J. D. Peterson, C. M. Freeman, D. L. Thompson, T. R. O'Keeffe, A. C. Engelsberg, A. F. Cruz, M. E. King, AND P M. Randall*. RADIANCE PROCESS EVALUATION FOR PARTICLE REMOVAL. ISBN 9067643122, 978, Chapter NA, K.L. Mittal (ed.), Particles on Surfaces 5&6: Detection, Adhesion and Removal. VSP International Science Publishers, Zeist, Netherlands, (Part 2):267-287, (1999).
Impact/Purpose:
information
Description:
The microelectronics industry (wafer, flat panel displays, photomasks, and storage media) is transitioning to higher device densities and larger substrate formats. These changes will challenge standard cleaning methods and will require significant increases to the fabricator infrastructure for ultra-pure water production, chemical management and distribution, and hazardous waste treatment, potentially impacting both the environment and industry economics. The U.S. Environmental Protection Agency (EPA) initiated a pollution prevention program, the Environmental Technology Initiative, to investigate the potential of new, environmentally friendly technologies. This paper presents the results of the EPA-funded project to test several microelectronics applications of the Radiance Process, a laser-based cleaning technology that requires no chemicals or water. The Process cleaned CMP slurry residues from silicon wafers and particles from as-received and we-cleaned flat panel display substrates. The Process did not remove post-etch residues of silicon dioxide and photoresist on silicon wafers.
